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| 2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition September 1997 Features * High breakdown voltage VCES = 1500 V * High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz * Isolated package TO-3PFM Outline TO-3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter 2SC5447 Absolute Maximum Ratings (Ta = 25C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25C Symbol VCES VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 6 8 16 50 150 -55 to +150 8 Unit V V A A W C C A Collector to emitter diode forward current ID Electrical Characteristics (Ta = 25C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO ICES hFE1 hFE2 Min 6 -- 5 4 -- -- -- -- -- Typ -- -- -- -- -- -- -- 0.2 0.15 Max -- 500 25 6 5 1.5 2 0.4 -- V V V s s Unit V A Test Conditions IE = 400mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 5A IC = 5A, IB = 1.25A IC = 5A, IB = 1.25A IF = 8A ICP = 4A, IB1 = 1.2A fH = 31.5kHz ICP = 4A, IB1 = 1A fH = 64kHz Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage Collector to emitter diode forward voltage Fall time Fall time VBE(sat) VECF tf tf 2 2SC5447 Main Characteristics Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (C) 200 Area of Safe Operaion 40 20 0.1 100 5000 1000 10 Collector to Emitter Voltage V CE(V) L = 180 H I B2 = -1 A duty < 1 % Tc = 25C Typical Output Characteristics 5 FE 1.0 A 0.9 A 0.8 A 0.7 A 0.6 A 0.5 A 0.4 A DC Current Transfer Ratio vs. Collector Current 100 50 75 C 20 10 5 Tc = -25 C 2 1 0.1 0.2 0.5 1 2 I C(A) 5 10 VCE = 5 V I C(A) 4 3 Collector Current 0.3 A DC Current Transfer Ratio h 2 0.2 A 0.1 A 25 C 1 Tc = 25 C 0 5 Collector to Emitter Voltage V CE (V) IB= 0 10 Collector Current 3 2SC5447 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage V BE(sat) (V) 10 5 2 1 IC / I B= 4 75 C 25 C Tc = -25 C 5 2 I C/ I B= 4 Tc = -25C 1 0.5 0.2 0.1 0.2 0.5 1 2 I C (A) 5 10 25 C 75 C 0.5 0.2 0.1 0.2 0.5 1 2 5 10 0.05 0.1 Collector Current I C (A) Collector Current Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) Fall Time vs. Base Current 0.8 I CP = 4 A f H = 64 kHz Tc = 25C 10 4A 5A 5 Fall Time t f (s) I C= 3 A 0.6 0.4 0.2 Tc = 25C 0 0.1 0.2 0.5 1 Base Current 2 I B (A) 5 10 0 0.4 0.8 1.2 1.6 2.0 Base Current I B1 (A) 4 2SC5447 Storage Time vs. Base Current 8 I CP = 4 A f H = 64 kHz Tc = 25C Storage Time tstg (s) 6 4 2 0 0.4 0.8 1.2 1.6 2.0 Base Current I B1 (A) 5 2SC5447 Package Dimensions Unit: mm 5.0 0.3 16.0 Max f 3.2 5.8 Max 2.7 4.0 3.2 2.6 1.4 Max 1.6 1.4 Max 21.0 0.5 5.0 19.9 0.3 0.66 5.45 0.5 +0.2 -0.1 0.9 +0.2 -0.1 5.45 0.5 Hitachi Code EIAJ JEDEC TO-3PFM -- -- 6 2SC5447 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 7 |
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